期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 46, 期 17-19, 页码 L454-L456出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.46.L454
关键词
tunnel magnetoresistance; magnetic tunnel junction; Co2FeAl0.5Si0.5; full-Heusler; MgO barrier; tunneling spin polarization
The authors have investigated the tunnel magnetoresistance (TMR) effect of magnetic tunnel junctions (MTJs) with Co2FeAl0.5Si0.5 full-Heuster electrodes and a MgO barrier in the thickness range of 1.5-2.5 nm. A cross-sectional transmission electron micrograph showed the epitaxial growth of both the upper and lower Co2FeAl0.5Si0.5 layers and a MgO barrier and some distortion in the MgO barrier after annealing above 400 degrees C. An exponential dependence of resistance x area product on MgO barrier thickness was observed. TMR ratio was strongly affected by MgO barrier thickness, exhibiting maxima of 220% at room temperature and 390% at 5 K. The latter corresponds to the spin polarization of 0.81. It was also found that the features of this MTJ include a small asymmetry voltage and weak temperature dependence of its TMR ratio.
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