期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 54, 期 5, 页码 1003-1023出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.894366
关键词
ferromagnets; multiferroics; oxides; spintronics; tunneling
Concomitant with the development of metal-based spintronics in the late 1980s and 1990s, important advances were made on the growth of high-quality oxide thin films and heterostructures. While this was at first motivated by the discovery of high-temperature superconductivity in perovskite Cu oxides, this technological breakthrough was soon applied to other transition-metal oxides and, notably, mixed-valence manganites. The discovery of colossal magnetoresistance in manganite films triggered intense research activity on these materials, but the first notable impact of magnetic oxides in the field of spintromics was the use of such manganites as electrodes in magnetic tunnel junctions, yielding tunnel magnetoresistance ratios that are one order of magnitude larger than what had been obtained with transition-metal electrodes. Since then, research on oxide spintronics has been intense, with the latest developments focused on diluted magnetic oxides and, more recently, on multiferroics. In this paper, we will review the most important results on oxide spintronics, emphasizing materials physics as well as spin-dependent transport phenomena, and finally give some perspectives on how the flurry of new magnetic oxides could be useful for next-generation spintronics devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据