The spatial resolution of scanning spreading resistance microscopy has been limited by using conventional probes when measuring in air. Sufficient electric contact of a probe-sample has been difficult to obtain in air due to the existence of moisture/contamination. Two-dimensional carrier profiling of nanoscale silicon devices is performed in a vacuum with conventional probes, and a high spatial resolution is obtained. Ultrashallow junctions down to 10 nm are measured accurately with high reproducibility. Experimental results show that a good electric contact between probe and sample is important for obtaining high spatial resolution. (C) 2007 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据