A hybrid AlGaInAs-silicon evanescent waveguide photodetector

We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of A1GaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the A1GaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 mu m wavelength range. This photodetector structure can be integrated with silicon evanescent lasers for power monitors or integrated with silicon evanescent amplifiers for preamplified receivers. (C) 2007 Optical Society of America