The authors have examined the nucleation conditions in the growth of catalyst-free InAs and Ge nanowires (NWs) on porous Si, as well as the growth of InAs NWs on a SiO2 substrate using 10 nm sized In nanoparticles. The NW growths were performed in a closed system. The results suggest that all the NWs grew from a solid nucleation state. For the growth using In nanoparticles, the results suggest that the growth mechanism is very different from the vapor-liquid-solid, in that the nanowire growth only begins after the nucleation particle solidifies. (C) 2007 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据