Structural studies of single crystalline In2O3 films epitaxially grown on InN(0001)

Single crystalline In2O3 is a prospective material to be used as a gate dielectric in InN based field effect transistors (FETs). This work addresses structural investigations of In2O3/InN heterostuctures for metal-oxide-semiconductor FET devices. Single crystalline cubic In2O3 (111) films were epitaxially grown on hexagonal InN (0001) epilayers. The epitaxial relationship between the film and the template was determined as In2O3[111]parallel to InN[0001] and In2O3[10(1) over bar]parallel to InN < 11(2) over bar 0 > with an effective lattice mismatch of 2.14%. On the basis of the structural investigations, a phenomenological model for the growth of In2O3 on InN (0001) is proposed. (C) 2007 American Institute of Physics.