20 mΩ, 750 v high-power AlGaN/GaN heterostructure field-effect transistors on si substrate

Low on-resistance and high-breakdown-voltage AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrate were fabricated. To improve the breakdown voltage of HFET, the total thickness of epitaxial layers was increased and the ate-to-drain spacing was expanded. As a result, the fabricated AlGaN/GaN HFETs with a gate width of 516mm exhibited a breakdown voltage of 750 V, an on-resistance of 20 m Omega, and a maximum drain current of more than 170 A. The on-resistance-area product (R-on x A) was 0.26 Omega center dot mm(2). This value was approximately 1/30 compared with that of conventional Si metaloxide-semiconductor field-effect transistors (MOSFETs).