Investigations of dielectric enhancement in (Ta2O5)1-x(TiO2)x ceramics prepared by laser-sintering technique

The maximum dielectric permittivity of Ti-doped Ta2O5 ceramics may reach 450 by a laser-sintering technique. The aim of this study is to investigate the mechanisms of the dielectric enhancement based on the unique structural and morphological properties of the laser-sintered ceramics. The reason for the dielectric enhancement is due to the crystal structure distortion in the high-temperature phase, the oriented grain growth taking place in a direction deviating from [001] in the laser-sintered ceramics. The concurrent nature of quenching effects, a sharp temperature gradient and mass transfer in liquid phase originated from laser high energy irradiation with strict directivity leads to the structural and morphological properties.