Parameterization of the band gap energy for GaNxAs1-x-zPz alloys

It is proposed here that the band gap energy for GaNxAs1-x-zPz (type II alloys) can be parameterized within a method which was demonstrated for Ga1-yInyNxAs1-x (type I alloys) [J. Appl. Phys. 101, 023522 (2007)]. This method requires knowledge of the band gap energy of GaNxAs1-x and GaNxP1-x as well as a bowing parameter. It has been observed that the obtained band gap predictions are in good agreement with available experimental data for GaNAsP. (c) 2007 American Institute of Physics.