Status and future of high-power light-emitting diodes for solid-state lighting

Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and similar to 80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for warm white color temperatures (similar to 3000-4000 K) and high color rendering (CRI > 80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (similar to 50 Mcd/m(2) white at 1 A forward current in 1 x 1 mm(2) chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs.