期刊
JOURNAL OF CRYSTAL GROWTH
卷 304, 期 1, 页码 64-68出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2007.01.037
关键词
crystal structure; magnetron sputtering; ZnO : Ga films; transparent conductive oxide; electrical and optical properties; semiconducting II-VI materials
Transparent conductive Ga-doped zinc oxide (ZnO:Ga) films with highly (0 0 2)-preferred orientation were deposited on glass substrates by DC reactive magnetron sputtering. Variation of structural, electrical, and optical properties with Ga content was investigated. The peak position of the (0 0 2) plane is linearly shifted to the lower 2 theta value with the increase of Ga content. The lowest resistivity of the ZnO:Ga films is 3.51 X 10(-4) Omega cm and the average transmittance of the films is over 90% in the visible range. The optical band gap of the films is in the range of 3.58-3.74 eV. The optimum growth condition was obtained by using the Zn-Ga alloy target of 3.0 at% Ga content. (C) 2007 Elsevier B.V. All rights reserved.
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