期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 42, 期 6, 页码 1425-1434出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2007.896521
关键词
reference oscillators; MEMS resonators; MEMS oscillators and temperature compensation
The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The design of a 5.5-MHz silicon bulk acoustic resonator has been optimized to offer high quality factor (>100000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100 degrees C as compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation circuitry were fabricated in a 2P3M 0.6-mu m CMOS process.
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