Epitaxial relationship between wurtzite GaN and β-Ga2O3

The epitaxial relationship between wurtzite GaN and monoclinic beta-Ga2O3 is studied by transmission electron microscopy. GaN is grown on beta-Ga2O3 by molecular beam epitaxy without any low-temperature buffer layer, obtaining c plane GaN on a plane beta-Ga2O3. The effect of the surface nitridation, which is necessary for the epitaxial growth, is analyzed at the atomic level. The lattice mismatch has a minimum of 2.6% for the in-plane epitaxial relationship < 0 1 1 > O-Ga2(3)parallel to < 1 0 (1) over bar0 >(GaN). (c) 2007 American Institute of Physics.