期刊
ADVANCED MATERIALS
卷 19, 期 11, 页码 1452-1463出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200602564
关键词
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Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge-voltage (capacitive) or current-voltage (resistive) response. A critical summary of the proposed charge-transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on-off ratio, on-state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.
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