Electrochemically constructed p-Cu2O/n-ZnO heterojunction diode for photovoltaic device

Polycrystalline n-ZnO/p-Cu2O heterojunctions have been fabricated by low-temperature eletrodepositions of ZnO and Cu2O layers in aqueous solutions. The condition for forming the Cu2O layer significantly reflected the electrical rectification characteristic and the photovoltaic performance, and the heterojunction fabricated under optimized conditions showed an excellent electrical rectification characteristic and a photovoltaic performance of 1.28% in conversion efficiency under an AM 1.5 illumination.