We report on the continuous-wave operation of a band edge laser at room temperature near 1.55 mu m in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity. (c) 2007 Optical Society of America.
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