4.6 Article

Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

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APPLIED PHYSICS LETTERS
卷 90, 期 24, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2749177

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A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n-type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications. (c) 2007 American Institute of Physics.

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