Near-field microwave microscope measurements to characterize bulk material properties

The authors discuss near-field scanning microwave microscope measurements of the complex permittivity for bulk dielectric (fused silica), semiconductor (silicon), and metal (copper). The authors use these measurements to test existing quasistatic theoretical approach to deembed the bulk material properties from the measured data. The known quasistatic models fit the measured data well with parameters for silicon (epsilon(s)=11.9, sigma(Si)=50 S/m) and fused silica (epsilon(s)=3.85, tan delta=1.0x10(-4)). However, for copper (with sigma(Cu)=5.67x10(7) S/m), apart from quasistatic coupling, an additional loss of 12 Omega is needed to fit the data. (c) 2007 American Institute of Physics.