Efficient current-induced domain-wall displacement in SrRuO3

We demonstrate current-induced displacement of ferromagnetic domain walls in submicrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10(9)-10(10) A/m(2) is sufficient for domain-wall displacement when the depinning field varies between 50 to 500 Oe. These results indicate relatively high efficiency of the current in displacing domain walls which we believe is related to the narrow width (similar to 3 nm) of domain walls in this compound.