期刊
PHYSICA B-CONDENSED MATTER
卷 396, 期 1-2, 页码 181-186出版社
ELSEVIER
DOI: 10.1016/j.physb.2007.04.002
关键词
MOS capacitor; SnO2; dielectric properties; frequency dependence
Dielectric responses of Au/SnO2/n-Si capacitors have been investigated. C-V and G-V measurements were performed in the voltage range -6-+8 V and the frequency range from 500 to 10 MHz. The SnO2 oxide layer thickness of 400 angstrom between metal and semiconductor was calculated from the measurement of the oxide capacitance in the strong accumulation region. The dielectric constant epsilon ', imaginary part of dielectric constant epsilon '', dielectric loss tangent tan delta and AC conductivity sigma(AC) were calculated from the C-V and G-V measurements and plotted as a function of frequency and voltage. Experimental results show that the epsilon ', epsilon '', and tan delta are found to decrease with increasing frequency while sigma(AC) is increased. The interfacial polarization can be more easily occurred at low frequencies, and the number of interface state density between SnO2/Si interfaces. Consequently, it contributes to the improvement of dielectric properties of Au/SnO2/n-Si (1 1 1) Schottky structure. (c) 2007 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据