Growth of high quality, epitaxial InSb nanowires

The growth of InSb nanowires on an Insb(111) substrate in a closed system is described. A high density InSb nanowires was grown by the use of InSb substrates in a torch sealed quartz tube at a temperature of 400 degrees C, using a 60 nm size gold colloid catalyst. The typical diameter of the InSb nanowires was 80-200 nm and they consisted of nearly equal atomic percent of In and Sb. Transmission electron microscopy showed the wires to be single crystal, with a growth direction of < 110 >. (c) 2007 Elsevier B.V. All rights reserved.