期刊
APPLIED SURFACE SCIENCE
卷 253, 期 16, 页码 6905-6909出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2007.02.013
关键词
ZnO film; Cu doping; photoluminescence; Raman scattering
The Cu-doped ZnO films were prepared by direct current reactive magnetron sputtering using a zinc target with various Cu-chips attached. The influences of Cu-doping on the microstructure, photoluminescence, and Raman scattering of ZnO films were systematically investigated. The results indicate that ZnO films doped with moderate Cu dopant (2.0-4.4 at.%) can obtain wurtzite structure with strong c-axis orientation. The near band edge (NBE) emission of ZnO film can be enhanced by Cu dopant with a concentration of 2.0 at.% and quench quickly with further increase of doping concentration. Two additional modes at about 230 and 575 cm(-1), which could be induced by Cu dopant, can be observed in Raman spectra of the Cu-doped ZnO films. (C) 2007 Elsevier B.V. All rights reserved.
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