A measurement of the electron-hole pair creation energy and the Fano factor in silicon for 5.9 keV X-rays and their temperature dependence in the range 80-270 K

A measurement of the energy omega to create an electron-hole pair and its temperature dependence between 80 and 270 K has been made using a small Si p-i-n diode and 5.9 keV X-rays. A value of 3.73 +/- 0.09 eV with a gradient of -0.0131 +/- 0.0004% K-1 was found. The photo-peak dispersion D was also measured and from the values between 110K and 235K, the product omega F was found to be 0.441 +/- 0.005 eV. This is consistent with a constant Fano factor F of 0.118 +/- 0.004. (C) 2007 Elsevier B.V. All rights reserved.