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Formation of magnetite in bismuth ferrrite under voltage stressing

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APPLIED PHYSICS LETTERS
卷 90, 期 26, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2752724

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Micro-Raman studies show that under similar to 700 kV/cm of dc voltage stressing for a few seconds, magnetite Fe3O4 forms in thin-film bismuth ferrite BiFeO3, probably due to phase separation. No evidence is found spectroscopically of hemite alpha-Fe2O3, maghemite gamma-Fe2O3, or Bi2O3. This may relate to the controversy regarding the magnitude of magnetization in BiFeO3. (c) 2007 American Institute of Physics.

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