期刊
APPLIED SURFACE SCIENCE
卷 253, 期 17, 页码 7094-7099出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2007.02.054
关键词
vanadium pentoxide; thin films; RF sputtering; electrical properties
V2O5 thin films were prepared under various conditions by using reactive RF sputtering technique. The microstructure and electrical properties of the films are have been investigated. X-ray diffraction data revealed the films deposited at low O-2/Ar ratio are amorphous. The orthorhombic structure of film improved after post annealing at 873 K. The microstructure parameters (crystallite/domain size and macrostrain) have been evaluated by using a single order Voigt profile method. Using the two-point probe technique, the dark conductivity as a function of the condition parameters such as film thickness, oxygen content and temperature are discussed. It was also found that, the behaviour of pd versus d was found to fit properly with the Fuchs-Sondheimer relation with the parameters: p(o) = 2.14 x 107 Omega cm and l(o) = 112 +/- 2 nm. At high temperature, the electrical conductivity is dominated by grain boundaries, the values of activation energy and potential barrier height were 0.90 +/- 0.02 eV and 0.92 +/- 0.02 V, respectively. (c) 2007 Published by Elsevier B.V.
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