期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 42, 期 1-6, 页码 387-391出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2007.04.078
关键词
ZnO; SiC; heterojunction; diode; IV; MBE
We report on the growth and characterization of n-ZnO/p-4H-SiC heterojunction diodes. Our n-ZnO layers were grown with radical-source molecular beam epitaxy (RS-MBE) on p-4H-SiC epilayers, which was previously prepared in a horizontal hot-wall reactor by chemical vapour deposition (CVD) on the n-type 4H-SiC wafers. Details on the n-ZnO growth on 8 degrees-off 4H-SiC wafers, the quality of the layers and the nature of realized p-n structures are discussed. Mesa diode structures were fabricated. A] was sputtered through a circle mask with diameter 1 mm and annealed to form Ohmic contacts to p-SiC. Ohmic contacts to the n-ZnO were formed by 30 nm/300 nm Ti/Au sputtered by electron beam evaporation. Electrical properties of the structures obtained have been studied with Hall measurements, and current-voltage measurements (I-V). I-V measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained. (c) 2007 Elsevier Ltd. All rights reserved.
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