期刊
IEEE ELECTRON DEVICE LETTERS
卷 28, 期 7, 页码 637-639出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.899329
关键词
FinFET; germanium; germanium-on-insulator (GeOI); rapid melt growth (RMG)
High-performance P-channel Ge FinFETs have been fabricated based on the rapid-melt-growth method. The fully depleted Ge FinFET has an OFF-state drain leakage current that is two orders of magnitude lower than the partially depleted one. The channel on the {110} surfaces provides an enhancement of the effective hole mobility of 60% and 28% at an effective field of 0.4 NIV/cm compared with, respectively, silicon universal hole mobility and our previous work with {100} Ge-on-insulator pMOSFETs.
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