4.6 Article

Nonvolatile multilevel conductance and memory effect in molecule-based devices

期刊

IEEE ELECTRON DEVICE LETTERS
卷 28, 期 7, 页码 572-574

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.900085

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electrical bistability; memory effect; multilevel conductance; organic thin film

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Electrical characteristics of a single-layer organic device using 2-(hexahydropyrimidin-2-ylidene)-malononitrile (HPYM) that is interposed between Al/Al2O3 (cathode) and Ag (anode) electrodes were investigated. The application of different positive voltages produced different high-conductance currents, resulting in the multilevel memory capability of the device. The high-conductance states could be erased back to the low-conductance state by the application of a negative bias. The formation of an aluminum oxide layer between Al and HPYM layer could be one effective method to increase the data-retention time but could be irrelevant with the electric-field-induced conductance-state transition of the device.

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