SnO2 nanorods prepared by inductively coupled plasma-enhanced chemical vapor deposition

SnO2 nanorods were successfully deposited on SiO2/Si substrate by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) using dibutyltin diacetate (DBTDA) as the precursor. Each of the SnO2 nanorods in situ grown under catalyst- and template-free growth condition and without any substrate heating was found to be [ 110] oriented single crystal. These needle-shaped mmorods have an average diameter between 5 and 16 nm and a length of 160 to 250 nm from TEM observation. Substrate distance and RF power showed notable effects on the formation of SnO2 nanorods.