The g factor of a single self-assembled quantum dot is tuned by applying an electrical bias voltage. Individual InGaAs quantum dots embedded in a stripe mesa structure sandwiched by Schottky electrodes are studied by photoluminescence measurements. We find that under applied magnetic field a dot with an asymmetric shift for applied bias voltage shows an increase of the exciton g-factor absolute value by about 8%, while most of the dots with relatively symmetric shifts show no significant change. The anomalous g-value increase is discussed in terms of the Kondo effect.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据