期刊
PHYSICAL REVIEW B
卷 76, 期 1, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.76.014112
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资金
- Direct For Mathematical & Physical Scien [844115] Funding Source: National Science Foundation
- Division Of Materials Research [844115] Funding Source: National Science Foundation
We present a segregated strain model that can describe the thickness-dependent dielectric properties of epitaxial ferroelectric films. Using a phenomenological Landau approach, we present results for two specific materials, making comparison with experiment and with first-principles calculations whenever possible. We also suggest a smoking gun benchtop probe to test our model.
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