4.6 Article

Modeling the dependence of properties of ferroelectric thin film on thickness

期刊

PHYSICAL REVIEW B
卷 76, 期 1, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.76.014112

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  1. Direct For Mathematical & Physical Scien [844115] Funding Source: National Science Foundation
  2. Division Of Materials Research [844115] Funding Source: National Science Foundation

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We present a segregated strain model that can describe the thickness-dependent dielectric properties of epitaxial ferroelectric films. Using a phenomenological Landau approach, we present results for two specific materials, making comparison with experiment and with first-principles calculations whenever possible. We also suggest a smoking gun benchtop probe to test our model.

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