期刊
MATERIALS TODAY
卷 10, 期 7-8, 页码 36-43出版社
ELSEVIER SCI LTD
DOI: 10.1016/S1369-7021(07)70178-5
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Photonic integrated circuits offer the potential of realizing low-cost, compact optical functions. Silicon-on-insulator SDI is a promising material platform for this photonic integration, as one can rely on the massive electronics processing infrastructure to process the optical components. However, the integration of a Si laser is hampered by its indirect bandgap. Here, we present the integration of a direct bandgap III-V epitaxial layer on top of the SOI waveguide layer by means of a die-to-wafer bonding process in order to realize near-infrared laser emission on and coupled to SOI.
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