Weak localization and electron-electron interaction effects in indium zinc oxide films

Electron weak localization (WL), electron-electron (el-el) interaction and electron-phonon (el-ph) scattering effects on the transport properties have been investigated for two to three-dimensional indium zinc oxide films. The temperature T dependence of the electron inelastic scattering rate 1/tau(in) of two-dimensional films has been deduced from magnetoconductance data. The rate 1/tau(in) well fits the sum of el-el and el-ph inelastic scattering rates, 1/tau(in) = 1/tau(in,el-el) + 1/tau(in,el-ph). Using the free electron model to determine the diffusion constant, we have obtained the effective electron mass m* approximate to 0.55m(0) by fitting the theory for to data at sufficiently low temperatures. Under a high magnetic field applied to suppress WL, the Hall coefficient varies, independently of the dimensionality, with temperature by about a two times larger rate than that of resistance. This result agrees well with the theory of Al'tshuler, Aronov, and Lee. At temperatures above approximate to 10 K, the T dependence of the inverse of mobility 1/mu is well described by the Gruneisen-Bloch formula with the use of the Debye temperature Theta(D) approximate to 750 - 760 K. The el-ph coupling constant lambda(el-ph) approximate to 1.1-1.3 has been obtained from the combination of data on tau(in)(T), 1/mu(T), m*, and Theta(D).