期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 46, 期 7A, 页码 4089-4095出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.46.4089
关键词
GaN; semipolar; (11(2)over-bar-2) plane; transmission electron microscopy; defect characterization
The microstructure of GaN templates and epitaxial lateral overgrown (ELO) films deposited on M-plane sapphire is investigated by transmission electron microscopy. The epitaxial relationship is [1120](sapphire) parallel to [1100](GaN) in-plane with a rmvth plane close to (1122)(GaN). The microstructure of the templates is dominated by the presence of basal stacking faults with a density of around 3 x 105 cm(-1). Basal stacking faults are either terminated by partial dislocations or connected by prismatic stacking faults. Perfect dislocations are also observed. ELO films with stripes parallel to [1100](GaN) allow us to reduce the density of basal stacking faults in the overgrown regions down to 5 x 10(3) cm(-1). In these overgrown materials, the density of perfect dislocations is 10(8) cm(-2) while neither partial dislocation nor prismatic stacking faults are observed.
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