High-throughput characterization of metal electrode performance for electric-field-induced resistance switching in metal/Pr0.7Ca0.3MnO3/metal structures

High-throughput exploration of electrode materials is demonstrated with an epitaxial thin-film device to determine the appropriate electrode materials for a resistance random access memory. In I-V measurements, only electrode pairs containing Al showed resistance switching (see figure). The disappearance of switching in the fourprobe measurements suggests that switching occurs near the interface of the Al electrode and the Pr0.7Ca0.3MnO3 film.