4.6 Article

Resistance switching in the metal deficient-type oxides: NiO and CoO

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APPLIED PHYSICS LETTERS
卷 91, 期 1, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2753101

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The resistance switching properties in Pt/Ni-O/Pt and Pt/Co-O/Pt synthesized by the magnetron sputtering have been investigated. The oxygen partial pressure during sputtering and the post-thermal process are crucial to forming of the trilayer. By investigating x-ray photoemission spectroscopy spectra, the increase of initial resistance in Ni-O was caused by the variation of the stoichiometry, while that in the Co-O was accompanied by the phase transformation between CoO and Co3O4. The resistance switching in Pt/Co-O/Pt and Pt/Ni-O/Pt exhibits the analogous electrode area and temperature dependences. As a result of the I-V measurements at the elevated temperature, the assistance of Joule heating in the reset process is implied. (C) 2007 American Institute of Physics.

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