Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with f(r) = 305 GHz at V-ds = 0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 mu m thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed, energy-efficient logic applications has been achieved.