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Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)

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PHYSICAL REVIEW LETTERS
卷 99, 期 1, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.99.016102

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After high-temperature H-2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (11 (2) over barn). Here, we found that the characteristic ordering distance of similar to 10 nm is independent of the vicinal angle (4 degrees-8 degrees off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7 degrees off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing quantized step bunching due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.

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