MOCVD of CoAl2O4 thin films from {Co[Al(OiC3H7)4]2} as precursor

A new synthetic route for the deposition of CoAl2O4 thin films at low temperature via MOCVD using the single-source precursor {Co[Al((OC3H7)-C-i)(4)](2)} is presented. Molecular properties of {Co[Al((OC3H7)-C-i)(4)](2)} have been investigated by means of NMR spectroscopy, mass spectrometry, and thermal analysis. Deposits have been characterized by XRD, AFM, UV-vis, and SIMS measurements.