4.4 Article

Growth and morphology of Cobalt thin films on Pd(111)

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SURFACE SCIENCE
卷 601, 期 14, 页码 3073-3081

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ELSEVIER
DOI: 10.1016/j.susc.2007.05.011

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growth; cobalt; palladium; single crystal epitaxy; low energy electron diffraction; scanning tunnelling inicroscopy

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We report on the growth of thin Co films on Pd(1 1 1) at three different temperatures 180 K, 300 K, and 550 K. The structure and morphology was determined by scanning tunneling microscopy and low energy electron diffraction. The growth mode was found to vary with temperature. For 180 K and 300 K, we observed a tendency to double layer growth for the initial layers while at elevated temperatures, the initial film grows in single layer. For most conditions, non-ideal three-dimensional growth was observed. Two-dimensional growth was only found for growth temperature of 550 K and coverages above 5 ML. Depending on temperature, the Co islands at low coverages exhibit three principally different shapes: dendritic at 180 K, hexagonal at 300 K and triangular at 550 K. For growth at 550 K and coverages above 5 ML, the islands changed to an irregular shape. This transition is most likely responsible for the transition to 2D growth. Further, the large strain is relaxed by the creation of a dislocation network with mixed fee and hcp stacking. Depending oil the temperature and coverage, a hexagonal or a triangular network was observed. Finally, we have investigated the effect of annealing Co films prepared at 180 K and 300 K. Heating to 490 K leads to coarsening and intermixing. (C) 2007 Elsevier B.V. All rights reserved.

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