Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

We report the growth of N- and Al-polar AIN layers on c-plane sapphire by flow-modulation MOCVD (FM-MOCVD) with some flow sequence modifications. Surface polarities were decided by pre-treatment for sapphire substrates prior to AIN seeding layer growth. Low-temperature nitridation (620 degrees C) was done for the N-polar samples, and no-nitridation was done for the Al-polar. To avoid strong vapor-phase reaction between TMA and NH3 and to enhance the surface migration of At atoms, FM-MOCVD technique was used. The flow sequence was modified for optimization of each N- and Al-polar growth. The surface features were completely different between the N- and M-polar AIN layers in atomic force microscope images. The former had domed structures and the latter atomic steps. The dislocation densities were counted from plane-view transmission microscope images to be about 3 x 10(10)cm(-2) for the N-polar layer and about 1 X 10(10)cm(-2) for the Al-polar. Secondary-ion mass spectroscopy measurement revealed oxygen- and carbon-incorporation into the layers. Band-edge and impurity-related emissions were observed from only the Al-polar layer by room-temperature cathodoluminescence, whereas the N-polar one did not emit. (c) 2007 Elsevier B.V. All rights reserved.