High carrier mobility of organic field-effect transistors with a thiophene-naphthalene mesomorphic semiconductor

A novel calamitic mesophase semiconductor based on symmetrically designed thiophene-naphthalene, 2,6-di(5'-n-octyl-2'-thienyl)naphthalene, is used as the active layer in a field-effect transistor and the device performance is studied (see figure). This mesogen has an excellently high mobility of 0.14 cm(2)V(-1)s(-1) in a polycrystalline film at room temperature.