Mobility enhancement in strained p-InGaSb quantum wells

Quantum wells of InGaSb clad by AlGaSb were grown by molecular beam epitaxy. The InGaSb is in compressive strain, resulting in a splitting of the heavy- and light-hole valence bands and an enhancement of the mobility. The mobility was found to increase with increasing InSb mole fraction for values of strain up to 2%. Room-temperature mobilities as high as 1500 cm(2)/V s were reached for 7.5 nm channels of In0.40Ga0.60Sb. These results are an important step toward the goal of high-performance p-channel field-effect transistors for complementary circuits operating at extremely low power.