期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 111, 期 29, 页码 10848-10854出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp072125x
关键词
-
资金
- Korea Institute of Industrial Technology(KITECH) [반도체38, 반도체27] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have carried out grazing incidence X-ray scattering measurements and specular X-ray reflectivity analysis of the nanoporous structures of low dielectric constant (low k) carbon-doped silicon oxide (SiCOH) films, which were prepared with plasma-enhanced chemical vapor deposition (PECVD) from vinyltrimethylsilane, divinyldimethylsilane, and tetravinylsilane as silane precursors and oxygen gas as an oxidant and then thermally annealed under various conditions. In addition, we measured the refractive indices and dielectric constants of the dielectric films. The nanoporous SiCOH thin films produced in the present study were homogeneous and had well-defined structures, smooth surfaces, and excellent properties and, thus, are suitable for use as low k interdielectric layer materials in the fabrication of advanced integrated circuits. In particular, the vinyltrimethylsilane precursor, which contains only one vinyl group, was found to produce SiCOH films after PECVD and annealing at 450 degrees C for 4 h with the highest population of nanopores and the lowest electron density, refractive index, and dielectric constant.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据