Total ionizing dose effects in NOR and NAND flash memories

We irradiated floating gate (FG) memories with NOR and NAND architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays, and gamma-rays. Two classes of phenomena are responsible for charge loss from pro-grammed FGs: the first is charge generation, recombination, and transport in the dielectrics, while the second is the emission of electrons above the oxide band. Charge loss from programmed FGs irradiated with protons of different energy closely tracks results from gamma-rays, whereas the use of X-rays results in dose enhancement effects.