期刊
MICROELECTRONICS RELIABILITY
卷 47, 期 8, 页码 1218-1221出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2006.09.024
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A detailed experimental investigation of low frequency noise as a function of technology-induced mechanical stress in MOSFET devices is presented. Both n- and p-MOSFETs have been studied. Strain in the channel region is obtained by the Shallow Trench Isolation (STI) technique. An increasing of 1/f noise intensity when compressive mechanical stress increases has been detected in p-channel transistor. A critical discussion of this experimental finding has been proposed in the scenario of advanced generation CMOS technologies. (c) 2006 Elsevier Ltd. All rights reserved.
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