期刊
IEEE ELECTRON DEVICE LETTERS
卷 28, 期 8, 页码 760-762出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.901680
关键词
atomistic tight-binding Hamiltonian; graphene; nanoribbon; nonequilibriurn Green's function formalism (NEGF); 3-D Poisson
We present an atornistic 3-D simulation of graphene nanoribbon field-effect transistors (GNR-FETs), based on the self-consistent solution of the 3-D Poisson and Schrodinger equations with open boundary conditions within the nonequilibrium Green's function formalism and a tight-binding Hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity to the variability of channel chirality, and similar leakage problems due to hand-to-hand tunneling. Acceptable transistor performance requires prohibitive effective nanoribbon width of 1-2 nm and atomistic precision that could in principle be obtained with periodic etch patterns or stress patterns.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据