Sensitivity to hole doping of Cu L3 resonant spectroscopies:: Inelastic x-ray scattering and photoemission of La2-xSrxCuO4

We present Cu L-3 edge resonant inelastic x-ray scattering (RIXS) and resonant x-ray photoemission spectroscopy (RXPS) of La2-xSrxCuO4 (x=0.0, 0.13, and 0.27). RIXS is found to be much more sensitive to the hole doping level than resonant photoemission. RIXS allows us to determine the average energy of dd excitations of both undoped and hole doped sites. The trade-off between the Raman and non-Raman spectral features depends on the doping level strongly in RIXS but weakly in RXPS. These experimental findings are consistently interpreted within a cluster model: The role of nonlocal core hole screening in the intermediate state is shown to be crucial. Nonlocal screening has an impact also on the interpretation of the L-3 x-ray absorption spectra in cuprates.