Formation of nanostructure on the surface of layered InSe semiconductor caused by oxidation under heating

Variations in the morphology of an InSe surface caused by air oxidation and the influence of the oxide-layered-semiconductor heteroboundary on the photoelectric properties of the In2O3-InSe structure were studied. It is found that an ordered nanosized heteroboundary can form as a result of oxidation of the layered InSe semiconductor and that this heteroboundary determines the high photosensitivity of the In2O3-InSe heterostructure in the spectral region of exciton absorption at room temperature.