4.6 Article

A flexible polymer memory device

期刊

ORGANIC ELECTRONICS
卷 8, 期 4, 页码 401-406

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ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2007.02.002

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polypyrrole; lanthanide polymer complex; flexible memory device; WORM

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A flexible polymer memory device is demonstrated in a sandwich structure of polypyrrole/P6FBEu/Au. Conductance switching at a voltage of about 4 V, with an ON/OFF current ratio up to 200, was observed in this flexible memory device. At the low-conductivity state, current density-voltage (J-V) characteristics of the device were dominated by a charge injection current. At the high conductivity state, J-V characteristics were dominated by a space-charge-limited current. Both the ON and OFF states are stable up to 106 read cycles at a read voltage of 1 V. The device can be used as a write-once read-many-times (WORM) memory with good electronic stability. (c) 2007 Elsevier B.V. All rights reserved.

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